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Chinese researchers develop non-volatile flash memory capable of 25 billion operations per second

Researchers at Fudan University have developed a new non-volatile flash memory technology that could revolutionise storage. Named “PoX”, this flash memory could potentially bridge the performance gap between volatile and non-volatile memory, paving the way for advancements in data-intensive AI systems. Traditional volatile memory solutions, such as SRAM and DRAM, …

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